Fast carrier relaxation of self-assembled InAs quantum dots embedded in strain-relaxed barriers for ultrafast nonlinear optical switching applications-Reference-Cited by-同舟云学术

Fast carrier relaxation of self-assembled InAs quantum dots embedded in strain-relaxed barriers for ultrafast nonlinear optical switching applications

Published:2009-03 Issue:7 Volume:311 Page:1807-1810
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kitada Takahiro,Mukai Takuya,Takahashi Tomoya,Morita Ken,Isu Toshiro

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. Ultrafast 1.55 μm all‐optical switching using low‐temperature‐grown multiple quantum wells

2. All-optical demultiplexing of 160–10Gbit∕s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs∕AlAs∕AlAsSb quantum well

3. All-optical switches on a silicon chip realized using photonic crystal nanocavities

4. Ultra-fast photonic crystal/quantum dot alloptical switch for future photonic networks

5. Optical Kerr gate switching of AlGaAs/AlAs multilayer structures without pattern effects by the two-photon resonant nonlinear response

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1. Terahertz wave emission with 1.5 μm pump from photoconductive antenna using stacked Er-doped-InAs quantum dot layers with ultrafast carrier relaxation;Journal of Applied Physics;2023-10-09

2. Mobility and activation energy of lateral photocurrent of InAs quantum dot layers with ultrafast carrier relaxation;Physica E: Low-dimensional Systems and Nanostructures;2021-02

3. Photoconductivity of Er-doped InAs quantum dots embedded in strain-relaxed InGaAs layers with 1.5 µm cw and pulse excitation;Japanese Journal of Applied Physics;2016-03-23

4. Terahertz emission from a coupled multilayer cavity with InAs quantum dots;Journal of Crystal Growth;2015-09

5. Ultrafast photocarrier relaxation processes in Er-doped InAs quantum dots embedded in strain-relaxed InGaAs barriers;Journal of Crystal Growth;2013-09