Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference30 articles.
1. AlGaN Nanocolumns and AlGaN/GaN/AlGaN Nanostructures Grown by Molecular Beam Epitaxy
2. Gallium Nitride-Based Nanowire Radial Heterostructures for Nanophotonics
3. Direction-Dependent Homoepitaxial Growth of GaN Nanowires
4. Spontaneously grown GaN and AlGaN nanowires
5. Nucleation conditions for catalyst-free GaN nanowires
Cited by 146 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Selective area growth of high quality GaN nanocolumns on Si(0 0 1) by plasma assisted molecular beam epitaxy;Journal of Crystal Growth;2023-12
2. III-nitride nanowires for emissive display technology;Journal of Information Display;2023-11-21
3. Band alignment and charge carrier transport properties of YAlN/III-nitride heterostructures;Applied Surface Science;2023-11
4. III-Nitride Nanowire LEDs for Enhanced Light Technology;2023 IEEE 33rd International Conference on Microelectronics (MIEL);2023-10-16
5. Selective Area Epitaxy of GaN Nanostructures: MBE Growth and Morphological Analysis;Crystal Growth & Design;2023-05-16
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3