Control of thick single crystal erbium oxide growth on (111) silicon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Introducing crystalline rare-earth oxides into Si technologies
2. Towards a monolithically-integrated electrically-pumped Si light emitter technology using epitaxial erbium oxide
3. Prospects for Epitaxial c-Er2O3 as a CMOS-compatible lasing material
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2. Rare-earth-metal oxide buffer for epitaxial growth of single crystal GeSi and Ge on Si(111);Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-03
3. Integrated high reflectivity silicon substrates for GaN LEDs;physica status solidi (c);2012-01-13
4. Structural and Thermal Properties of Single Crystalline Epitaxial Gd2O3and Er2O3Grown on Si(111);ECS Journal of Solid State Science and Technology;2012
5. Study of the Structural and Thermal Properties of Single Crystalline Epitaxial Rare-Earth-Metal Oxide Layers Grown on Si(111);ECS Transactions;2011-10-04
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