Growth parameter optimization of the GaInP/AlGaInP active zone of 635nm red laser diodes
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Uniform and High-Power Characteristics of AlGaInP-Based Laser Diodes With 4-Inch-Wafer Process Technology
2. 3-W Broad Area Lasers and 12-W Bars With Conversion Efficiencies up to 40% at 650 nm
3. Realization of High-Power Highly Efficient GaInP/AlGaInP Ridge Laser Diodes for Recordable/Rewritable Digital Versatile Discs
4. Optimisation of high power AlGaInP laser diodes for optical storage applications
5. High-power semiconductor red laser arrays for use in photodynamic therapy
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