Growth and dislocation etching of InBi1−xSex (x=0.15) single crystals
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Indium antimonide‐bismuth compositions grown by molecular beam epitaxy
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3. Growth and phase stability of epitaxial metastable InSb1−xBixfilms on GaAs. I. Crystal growth
4. Growth and characterization of InSbBi for long wavelength infrared photodetectors
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1. Directional solidification and characterization of InBi1−xSbx crystals;Journal of Materials Science: Materials in Electronics;2016-03-28
2. Growth and characterization of Bi2–Sb Te3 (x=0–0.2) single crystals;Journal of Crystal Growth;2015-12
3. Influence of Te doping on the dielectric and optical properties of InBi crystals grown by directional freezing;International Journal of Minerals, Metallurgy, and Materials;2014-05
4. Growth Parameters for Thin Film InBi Grown by Molecular Beam Epitaxy;Journal of Electronic Materials;2014-01-28
5. Growth and characterization of InxBi2−xTe3 single crystals;Journal of Crystal Growth;2012-02
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