Novel technique for monitoring of MOVPE processes-Reference-Cited by-同舟云学术

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Novel technique for monitoring of MOVPE processes

Published:2008-11 Issue:23 Volume:310 Page:4724-4726
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Volkov P.V.,Goryunov A.V.,Daniltsev V.M.,Luk’yanov A.Yu.,Pryakhin D.A.,Tertyshnik A.D.,Khrykin O.I.,Shashkin V.I.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference7 articles.

1. Recent advances in MOCVD process technology for the growth of compound semiconductor devices

2. Evaluation of sapphire substrate heating behaviour using GaN band-gap thermometry

3. Optical monitoring of technological parameters in metal-organic vapor-phase epitaxy

4. Recent progress in fibre optic low-coherence interferometry

5. P.V. Volkov, A.V. Goryunov, A.D. Tertyshnik, Patent RU 2307318.

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3. Low-coherence interferometry as a tool for monitoring laser micro- and nanoprocessing of diamond surfaces;Quantum Electronics;2017-11-28

4. Investigation into the processes of plasmachemical etching of a photoresist with the help of in situ optical monitoring;Russian Microelectronics;2017-01

5. Features of SOI substrates heating in MBE growth process obtained by low-coherence tandem interferometry;Journal of Crystal Growth;2016-08

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