The effect of RF power and deposition temperature on the structure and electrical properties of Mg4Ta2O9 thin films prepared by RF magnetron sputtering-Reference-Cited by-同舟云学术

The effect of RF power and deposition temperature on the structure and electrical properties of Mg4Ta2O9 thin films prepared by RF magnetron sputtering

Published:2009-01 Issue:3 Volume:311 Page:627-633
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Huang Cheng-Liang,Chen Jhih-Yong

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. Dielectric relaxation of Ba0.7Sr0.3TiO3 thin films from 1 mHz to 20 GHz

2. High nonlinearity of Ba0.6Sr0.4TiO3 films heteroepitaxially grown on MgO substrates

3. Effects of additive elements on electrical properties of tantalum oxide films

4. Some Properties of RF Sputtered Al2 O 3 ‐ Ta2 O 5 Composite Thin Films

5. Strontium titanate thin films by rapid thermal processing

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1. Modulation of electrical properties of sputtered Ta₂O₅ films by variation of RF power and substrate temperature;Physica Scripta;2024-01-12

2. Photoluminescence in wide band gap corundum Mg4Ta2O9 single crystals*;Chinese Physics B;2020-07-01

3. Electrochemical and microstructural characterization of magnetron-sputtered ATO thin films as Li–ion storage materials;Materials Research Bulletin;2015-01

4. Floating zone growth and optical phonon behavior of corundum Mg4Ta2O9 single crystals;RSC Advances;2015

5. The effect of deposition power on the micro-structure and dielectric response of Pb0.4Sr0.6TiO3 thin films;Ceramics International;2014-01