MBE growth of In(Ga)As quantum dots for entangled light emission-Reference-Cited by-同舟云学术

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MBE growth of In(Ga)As quantum dots for entangled light emission

Published:2009-03 Issue:7 Volume:311 Page:1811-1814
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Nicoll C.A.,Salter C.L.,Stevenson R.M.,Hudson A.J.,Atkinson P.,Cooper K.,Shields A.J.,Ritchie D.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

1. Quantum cryptography based on Bell’s theorem

2. A scheme for efficient quantum computation with linear optics

3. Regulated and Entangled Photons from a Single Quantum Dot

4. A semiconductor source of triggered entangled photon pairs

5. Improved fidelity of triggered entangled photons from single quantum dots

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Excitons in InGaAs quantum dots without electron wetting layer states;Communications Physics;2019-08-09

2. Enhancing the Photoluminescence of GaSb/GaAs QD Nano-Structures;Springer Theses;2018

3. The role of phonons for exciton and biexciton generation in an optically driven quantum dot;Journal of Physics: Condensed Matter;2014-10-02

4. Entangled-Photon Pair Emission from a Light-Emitting Diode;Journal of Physics: Conference Series;2011-03-01

5. An entangled-light-emitting diode;Nature;2010-06

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