Nitride-based light-emitter and photodiode dual function devices with InGaN/GaN multiple quantum dot structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
2. Nitride-based semiconductors for blue and green light-emitting devices
3. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
4. InGaN/GaN light emitting diodes with a p-down structure
5. Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes
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