MBE growth of II–VI materials on GaSb substrates for photovoltaic applications-Reference-Cited by-同舟云学术

MBE growth of II–VI materials on GaSb substrates for photovoltaic applications

Published:2009-03 Issue:7 Volume:311 Page:2116-2119
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Wang S.,Ding D.,Liu X.,Zhang X.-B.,Smith D.J.,Furdyna J.K.,Zhang Y.-H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. Y.-H. Zhang, S.-Q. Yu, S.R. Johnson, D. Ding, S.-N. Wu, in: Proceedings of the 33rd IEEE Photovoltaic, Energy Specialist Conference, 2008, in press.

2. S.-N. Wu, D. Ding, S. R. Johnson, S.-Q. Yu, Y.-H. Zhang, unpublished.

3. Properties of Group-IV III–V and II–VI Semiconductors;Adachi,2005

4. Electrical and optical properties of ZnTe-GaSb heterojunctions

5. Epitaxial growth of ZnTe on GaSb(100) by rf sputtering

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