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Characterization of GaSb nanowires grown by MOVPE

Published:2008-11 Issue:23 Volume:310 Page:5119-5122
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Jeppsson Mattias,Dick Kimberly A.,Nilsson Henrik A.,Sköld Niklas,Wagner Jakob B.,Caroff Philippe,Wernersson Lars-Erik

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. Structural characteristics of GaSb∕GaAs nanowire heterostructures grown by metal-organic chemical vapor deposition

2. GaAs/GaSb nanowire heterostructures grown by MOVPE

3. Vertical high-mobility wrap-gated InAs nanowire transistor

4. L.S. Karlsson, K.A. Dick, K. Deppert, J.-O. Malm, L. Samuelson, L.R. Wallenberg, manuscript in progress.

5. Understanding the 3D structure of \mathrm {GaAs\langle 111\rangle B} nanowires

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