CdSe quantum dots in ZnSe nanowires as efficient source for single photons up to 220K-Reference-Cited by-同舟云学术

CdSe quantum dots in ZnSe nanowires as efficient source for single photons up to 220K

Published:2009-03 Issue:7 Volume:311 Page:2123-2127
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Aichele Thomas,Tribu Adrien,Sallen Gregory,Bocquel Juanita,Bellet-Amalric Edith,Bougerol Catherine,Poizat Jean-Philippe,Kheng Kuntheak,André Régis,Tatarenko Serge,Mariette Henri

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. Elastic and surface energies: Two key parameters for CdSe quantum dot formation

2. Atomic layer deposition of ZnSe/CdSe superlattice nanowires

3. ZnSe nanowires epitaxially grown on GaP(111) substrates by molecular-beam epitaxy

4. Low-temperature synthesis of ZnSe nanowires and nanosaws by catalyst-assisted molecular-beam epitaxy

5. Optically Bright Quantum Dots in Single Nanowires

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