Study of the oxygen incorporation in Al0.2Ga0.3In0.5P:Be layers grown by MBE employing a P-cracker cell-Reference-Cited by-同舟云学术

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Study of the oxygen incorporation in Al0.2Ga0.3In0.5P:Be layers grown by MBE employing a P-cracker cell

Published:2009-03 Issue:7 Volume:311 Page:1650-1654
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Soubervielle-Montalvo C.,Mishournyi V.,de Anda F.,Gorbatchev A.,Hernández I.C.,Gallardo S.,Kudriatsev Y.,López-López M.,Méndez-García V.H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference22 articles.

1. High-efficiency AlGaInP light-emitting diodes for solid-state lighting applications

2. Reduction of oxygen contamination in InGaP and AlGaInP films grown by solid source molecular beam epitaxy

4. GaInAs‐AlInAs structures grown by molecular beam epitaxy

5. Characteristics of Schottky diodes on AlxIn1-xAs grown by MOCVD

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Unintentional boron contamination of MBE-grown GaInP/AlGaInP quantum wells;Journal of Crystal Growth;2015-09

2. Effect of oxygen incorporation on the vibrational properties of Al0.2Ga0.3In0.5P:Be films;Thin Solid Films;2011-10

3. Optical characterization of AlxGa1−xAs/GaAs modulation-doped heterostructures grown under As2 and As4 fluxes;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-05

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