Growth and characterization of unintentionally doped GaN grown on silicon(111) substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. AlGaN/GaN HEMTs-an overview of device operation and applications
2. Present Status and Future Prospect of Widegap Semiconductor High-Power Devices
3. Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness
4. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation
5. 12 W/mm AlGaN–GaN HFETs on Silicon Substrates
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1. Effect of carbon impurity on the dislocation climb in epitaxial GaN on Si substrates;Applied Physics Express;2022-09-09
2. High-Temperature Atomic Layer Deposition of GaN on 1D Nanostructures;Nanomaterials;2020-12-05
3. Characterization of Deep Levels in AlGaN|GaN HEMT by FT-DLTS and Current DLTS;Semiconductors;2020-10
4. Impact of In Situ Annealing on the Deep Levels in Ni‐Au/AlN/Si Metal–Insulator–Semiconductor Capacitors;physica status solidi (a);2019-07-24
5. Pulsed photo-ionization spectroscopy in carbon doped MOCVD GaN epi-layers on Si;Semiconductor Science and Technology;2018-06-19
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