Modeling Irradiation-Induced Charging-Annealing Dynamics in Metal-Oxide-Semiconductor Devices-Reference-Cited by-同舟云学术

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Modeling Irradiation-Induced Charging-Annealing Dynamics in Metal-Oxide-Semiconductor Devices

Published:2005 Issue: Volume: Page:841-847
ISSN:
Container-title:Recent Advances in Multidisciplinary Applied Physics
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Author:

Faigón ,Cedola A.,Redin E.G.,Kruszenski G.,Lopez J.,Maestri M.,Lipovetzky J.,Docters A.

Publisher

Elsevier

Reference21 articles.

1. Ionizing Radiation in MOS Devices and Circuits;Ma,1989

2. A Comprehensive Physically Based Predictive Model for Radiation Damage in MOS Systems;Lenahan;IEEE Transactions on Nuclear Science,1998

3. Charging in gate oxide under irradiation: A numerical approach;Fourches;Journal of Applied Physics,2000

4. Effects of oxide traps, interface traps, and border traps on metal-oxide-semiconductor devices;Fleetwood;Journal of Applied Physics,1993

5. A model of hole trapping in SiO2 films on Si;Lenahan;Journal of Applied Physics,1997

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