Evaluation of interfacial structure of [111] and [001] oriented epitaxial NiO layers on GaAs substrate by non-destructive techniques-Reference-Cited by-同舟云学术

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Evaluation of interfacial structure of [111] and [001] oriented epitaxial NiO layers on GaAs substrate by non-destructive techniques

Published:2019-01 Issue: Volume:159 Page:335-340
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Singh S.D.,Das Arijeet,Swami M.K.,Goutam U.K.,Sharma R.K.,Patel H.S.,Rai S.K.,Ganguli Tapas

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference25 articles.

1. Sol–gel preparation and optical characterization of NiO and Ni1−xZnxO thin films

2. Investigation of structural, morphological and optical properties of nickel zinc oxide films prepared by sol–gel method

3. Optical Properties of Nickel Oxide

4. Unusual x-ray excited luminescence spectra of NiO suggest self-trapping of thed-dcharge-transfer exciton

5. Spectroscopic investigation of the hole states in Ni-deficient NiO films

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of optical, electronic, and magnetic properties of p-type NiO thin film on different substrates;Thin Solid Films;2021-08

2. XPS Study of Long-Term Passivation of GaAs Surfaces Using Saturated Ammonium Sulfide Solution under Optimum Condition;Russian Journal of Electrochemistry;2021-05

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