Film size-dependent bias voltage regulated resistance switching behavior for ultra-thin Fe65Co35 films on Pb(Mg1/3Nb2/3)O3–PbTiO3 piezoelectric substrates-Reference-Cited by-同舟云学术

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Film size-dependent bias voltage regulated resistance switching behavior for ultra-thin Fe65Co35 films on Pb(Mg1/3Nb2/3)O3–PbTiO3 piezoelectric substrates

Published:2023-05 Issue: Volume:211 Page:111931
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Ma Meibing^ORCID,Han Yemei,Yin Xin,Shen Kaisong,Hu Kai,Sun Zheng,Wang Fang,Wu Haitao,Zhang Kailiang

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference64 articles.

1. Electric field control of magnetism in FePd/PMN-PT heterostructure for magnetoelectric memory devices;Yang;J. Appl. Phys.,2014

2. Magnetoelectric properties of three-layered composite thin film fabricated by pulsed laser deposition;Zhao;Vacuum,2022

3. Room temperature magnetoelectric memory cell using stress-mediated magnetoelastic switching in nanostructured multilayers;Tiercelin;Appl. Phys. Lett.,2011

4. Structural and magnetic investigations of innovative lead-free particulate composites of NBT-M-Type SrFe12O19 Hexaferrite;Dagar;Vacuum,2020

5. Reversible strain control of magnetic anisotropy in magnetoelectric heterostructures at room temperature;Staruch;Sci. Rep.,2016

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