Microstructural, chemical states and electrical properties of Au/CuO/n-InP heterojunction with a cupric oxide interlayer-Reference-Cited by-同舟云学术

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Microstructural, chemical states and electrical properties of Au/CuO/n-InP heterojunction with a cupric oxide interlayer

Published:2018-06 Issue: Volume:152 Page:15-24
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Balaram N.,Rajagopal Reddy V.,Sekhar Reddy P.R.,Janardhanam V.^ORCID,Choi Chel-Jong

Funder

National Research Foundation of Korea (NRF)

Ministry of Education, Republic of Korea

R&D Program for Industrial Core Technology

Ministry of Trade, Industry and Energy, Republic of Korea

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference65 articles.

1. A new method to fabricate Au/n-type InP Schottky contacts with an interfacial layer;Hattori;Solid State Electron.,1991

2. Electron trapping in thin oxide on GaAs and InP at 77 K;Eftekhari;J. Vac. Sci. Technol. B,1993

3. Temperature dependence of the electrical characteristics of Yb/p-InP tunnel metal-insulator-semiconductor junctions;Sing;J. Appl. Phys.,1990

4. Ultrahigh-Speed integrated circuits using InP-based HEMTs;Enoki;Jpn. J. Appl. Phys.,1998

5. Barrier height enhancement of InP Schottky junctions by treatment with photo decomposed with PH3;Sugino;Electron. Lett.,1990

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