Si nanocrystals formation in SiO2 by ion implantation: The effects of RTA and UV irradiation on photoluminescence-Reference-Cited by-同舟云学术

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Si nanocrystals formation in SiO2 by ion implantation: The effects of RTA and UV irradiation on photoluminescence

Published:2012-04 Issue:10 Volume:86 Page:1634-1637
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Iwayama T.S.

Funder

KAKENHI, Grant-in Aid for Scientific Research

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference25 articles.

1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

2. Porous silicon formation: A quantum wire effect

3. Light emission in silicon from physics to devices;Brus,1998

4. Light emitting silicon for microphotonics;Ossicini,2003

5. Silicon photonics,2008

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1. Synthesis and Characterization of Nanocrystals and Nanoparticles;Semiconductor Nanocrystals and Metal Nanoparticles;2016-08-17

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