Molecular effect on surface topography of GaN bombarded with PF4 ions-Reference-Cited by-同舟云学术

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Molecular effect on surface topography of GaN bombarded with PF4 ions

Published:2012-04 Issue:10 Volume:86 Page:1638-1641
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Titov A.I.,Karaseov P.A.,Belyakov V.S.,Karabeshkin K.V.,Arkhipov A.V.,Kucheyev S.O.,Azarov A.Yu.

Funder

RFBR

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference25 articles.

1. GaN: Processing, defects, and devices

2. Ion implantation into GaN

3. Ion-beam-induced porosity of GaN

4. Ion-beam-induced dissociation and bubble formation in GaN

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1. Analysis of Individual Collision Cascade Parameters during Irradiation of Ga2O3 by Atomic and Molecular Ions;Semiconductors;2024-03

2. Radiation Damage Accumulation in α-Ga2O3 under P and PF4 Ion Bombardment;Semiconductors;2023-10

3. Molecular Effect in Damage Formation in β-Ga2O3;Springer Proceedings in Physics;2022

4. Impact of Chemical Effects on Topography and Thickness of Modified GaN Surface Layers Bombarded by F and Ne Ions;Springer Proceedings in Physics;2020-11-28

5. Formation of Au Nanoparticles and Features of Etching of a Si Substrate under Irradiation with Atomic and Molecular Ions;Semiconductors;2020-01

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