Investigation of TaN as the wet etch stop layer for HKMG-last integration in the 22 nm and beyond nodes CMOS technology-Reference-Cited by-同舟云学术

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Investigation of TaN as the wet etch stop layer for HKMG-last integration in the 22 nm and beyond nodes CMOS technology

Published:2015-09 Issue: Volume:119 Page:185-188
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Cui Hushan,Luo Jun,Xu Jing,Gao Jianfeng,Xiang Jinjuan,Tang Zhaoyun,Wang Xiaolei,Lu Yihong,He Xiaobin,Li Tingting,Tang Bo,Yu Jiahan,Yang Tao,Yan Jiang,Li Junfeng,Zhao Chao,Ye Tianchun

Funder

National S&T Major Project 02

Chinese Academy of Sciences

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference28 articles.

1. Proc. VLSI symp. technol.;Veloso,2011

2. Physical and electrical properties of metal gate electrodes on HfO[sub 2] gate dielectrics

3. IEDM tech. dig.;Samavedam,2002

4. Contributions to the effective work function of platinum on hafnium dioxide

5. VLSI tech. dig.;Hyun,2011

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural characterization of tantalum nitride films as wet etch stop layer in advanced multiwork function metal gate MOSFETs;Journal of Vacuum Science & Technology B;2018-11

2. Properties of ALD TaxNy films as a barrier to aluminum in work function metal stacks;Journal of Applied Physics;2018-10-28

3. Growth mechanism of atomic-layer-deposited TiAlC metal gate based on TiCl 4 and TMA precursors;Chinese Physics B;2016-03

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