New approach to predict impurity concentration in high-purity antimony metal prepared by vacuum distillation-Reference-Cited by-同舟云学术

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New approach to predict impurity concentration in high-purity antimony metal prepared by vacuum distillation

Published:2024-08 Issue: Volume:226 Page:113285
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Zheng Lin,Zhang Lei^ORCID,Zhou Yi,Sun Yan-rong,Nan Chang-bin,Zhou Xi-ping,Qin Shi-min,Shi Hua-feng,Li Jia-xuan,Xu Bao-qiang,Yang Bin,Pan Jin-gong,Fu Gan-hua

Publisher

Elsevier BV

Reference37 articles.

1. Chapter one-epitaxial integration of antimonide-based semiconductor lasers on Si;Tournié;Semiconduct. Semimet.,2018

2. Effect of twin boundary formation on the growth rate of the GaSb{111} plane;Shiga;Acta Mater.,2020

3. Rattler-seeded InSb nanoinclusions from metastable indium-filled In0.1Co4Sb12 skutterudites for high-performance thermoelectrics;Eilertsen;Acta Mater.,2012

4. Improving energy efficiency of commercial aluminum alloy as anodes for Al-air battery through introducing micro-nanoscale AlSb precipitates;Zhang;Electrochim. Acta,2022

5. Uniformly strained AlGaSb/InGaSb/AlGaSb quantum well on GaAs substrates for balanced complementary metal-oxide-semiconductors;Roh;Curr. Appl. Phys.,2017

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The volatilization law of standard impurity elements in 3 N antimony during vacuum distillation and preparing antimony with 4 N8 content;Separation and Purification Technology;2024-09

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