Process parameters influence on the growth rate during silicon purification by vacuum directional solidification-Reference-Cited by-同舟云学术

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Process parameters influence on the growth rate during silicon purification by vacuum directional solidification

Published:2016-03 Issue: Volume:125 Page:40-47
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Qiu Shi,Wen Shutao,Fang Ming,Zhang Lei,Gan Chuanhai,Jiang Dachuan,Tan Yi,Li Jintang,Luo Xuetao

Funder

National Natural Science Foundation of China

Scientific Technological Innovation Platform of Fujian Province

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference22 articles.

1. Quantitative study on long term global solar photovoltaic market;Gan;Renew. Sustain. Energy Rev.,2015

2. Characteristics and value enhancement of cast silicon ingots;Zhang;Sol. Energy Mater. Sol. Cells,2015

3. Towards solar grade silicon: challenges and benefits for low cost photovoltaics;Pizzini;Sol. Energy Mater. Sol. Cells,2010

4. Multiple slag operation on boron removal from metallurgical-grade silicon using Na2O-SiO2 slags;Fang;Ind. Eng. Chem. Res.,2014

5. Numerical simulation of phosphorus removal from silicon by induction vacuum refining;Zheng;Metall. Mater. Trans. A,2011

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1. Silicon Solar Cells: Trends, Manufacturing Challenges, and AI Perspectives;Crystals;2024-02-07

2. Numerical Investigation on the Effect of Thermal Gate Moving Rate on Directional Solidification Process;Silicon;2022-11-30

3. Investigation of DS Furnace Heat Exchange Block Thickness for the Improvement mc-Si Ingot Quality;Silicon;2022-10-18

4. Numerical investigation on the effect of thermal gate moving rate on directional solidification process;2022-10-04

5. Numerical Investigation of Bottom Grille for Improving Large-Size Silicon Quality in Directional Solidification Process;Silicon;2021-05-14

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