Improvement of quantum efficiency of MBE grown AlGaAs/InGaAs/GaAs edge emitting lasers by optimisation of construction and technology-Reference-Cited by-同舟云学术

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Improvement of quantum efficiency of MBE grown AlGaAs/InGaAs/GaAs edge emitting lasers by optimisation of construction and technology

Published:2007-12 Issue:4 Volume:82 Page:383-388
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Kosiel Kamil,Muszalski Jan,Szerling Anna,Bugajski Maciej,Jakieła Rafał

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference5 articles.

1. Mroziewicz B, Bugajski M, Nakwaski W. Physics of semiconductor lasers. Amsterdam: North-Holland; 1991.

2. Heterostructure lasers—principles and applications;Casey,1978

3. Unusual increase of the Auger recombination current in 1.3 μm GaInNAs quantum-well lasers under high pressure

4. Importance of Auger recombination in InAs 1.3 [micro sign]m quantum dot lasers

5. Growth and optimization of extremely high-pulse-power graded-index separate confinement heterostructure quantum well AlGaAs/InGaAs diode lasers with broadened waveguides

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MBE—Technology for nanoelectronics;Vacuum;2008-06

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