Effect of reactant transport on the trench profile evolution for silicon etching in chlorine plasmas
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference27 articles.
1. Ion‐ and electron‐assisted gas‐surface chemistry—An important effect in plasma etching
2. Surface studies of and a mass balance model for Ar+ ion-assisted Cl2 etching of Si
3. Kinetic study of low energy argon ion-enhanced plasma etching of polysilicon with atomic/molecular chlorine
4. Chemical and physical sputtering of fluorinated silicon
5. Etching of polysilicon in inductively coupled Cl[sub 2] and HBr discharges. II. Simulation of profile evolution using cellular representation of feature composition and Monte Carlo computation of flux and surface kinetics
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2. Impact of sputtering and redeposition on the morphological profile evolution during ion-beam etching of blazed gratings;Journal of Vacuum Science & Technology A;2024-07-26
3. Hybrid simulation of radio frequency biased inductively coupled Ar/O<sub>2</sub>/Cl<sub>2</sub> plasmas;Acta Physica Sinica;2024
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