Homoepitaxial lateral growth of single-crystal diamond with eliminating PCD rim and enlarging surface area
Author:
Funder
National Natural Science Foundation of China
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference39 articles.
1. Homo-epitaxial growth of single crystal diamond in the purified environment by active O atoms;Liu;Vacuum,2018
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3. Impact of methane concentration on surface morphology and boron incorporation of heavily boron-doped single crystal diamond layers;Rouzbahani;Carbon,2021
4. Investigation on the influence of the gas flow mode around substrate on the deposition of diamond films in an overmoded MPCVD reactor chamber;Wang;Vacuum,2020
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1. From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices;Journal of Physics: Materials;2024-03-08
2. The effects of self-assembling off-angles on the homoepitaxial lateral outward growth of single-crystal diamond;Vacuum;2023-06
3. Surface Morphology and Spectroscopic Features of Homoepitaxial Diamond Films Prepared by MWPACVD at High CH4 Concentrations;Materials;2022-10-22
4. Comparison of heteroepitaxial diamond nucleation and growth on roughened and flat Ir/SrTiO3 substrates;Vacuum;2022-10
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