Effects of buffer layer thickness on properties of ZnO thin films grown on porous silicon by plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

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Effects of buffer layer thickness on properties of ZnO thin films grown on porous silicon by plasma-assisted molecular beam epitaxy

Published:2012-03 Issue:9 Volume:86 Page:1373-1379
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Kim Min Su,Kim Do Yeob,Cho Min Young,Nam Giwoong,Kim Soaram,Lee Dong-Yul,Kim Sung-O.,Leem Jae-Young

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference44 articles.

1. Recent advances in ZnO materials and devices

2. Recent advances in processing of ZnO

3. A comprehensive review of ZnO materials and devices

4. Effect of preheating temperature on structural and optical properties of ZnO thin films by sol–gel process

5. Preparation of aluminum foil-supported nano-sized ZnO thin films and its photocatalytic degradation to phenol under visible light irradiation

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