Discontinuous tracks in relaxed SiGe alloy layers: Formation and thermal evolution-Reference-Cited by-同舟云学术

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Discontinuous tracks in relaxed SiGe alloy layers: Formation and thermal evolution

Published:2005-05 Issue:2-4 Volume:78 Page:375-379
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Gaiduk P.I.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference20 articles.

1. Nuclear tracks in solids: principles and applications;Fleischer,1975

2. Proceedings of the fourth international symposiums on swift heavy ions in matter, 1998, Berlin; Nucl Instrum Methods B 1998:146.

3. Track recrystallization in semiconductors observed for xenon irradiations at 0.9 MeV amu-1

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Track formation in III-N semiconductors irradiated by swift heavy ions and fullerene and re-evaluation of the inelastic thermal spike model;Journal of Materials Science;2015-05-07

2. Structural Changes in SiGe/Si Layers Induced by Fast Crystallization;Subsecond Annealing of Advanced Materials;2014

3. Tracks in epitaxial Si1−xGex alloy layers: Effect of layer thickness;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-03

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