Ab initio simulation of high pressure influence on He–H interaction in silicon
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference11 articles.
1. Efficient production of silicon-on-insulator films by co-implantation of He+ with H+
2. Effects of pressure and hydrogen on the formation of vacancies and divacancies in crystalline silicon
3. Inhomogeneous Electron Gas
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