Dielectric properties and model of hopping conductivity of GaAs irradiated by H+ ions-Reference-Cited by-同舟云学术

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Dielectric properties and model of hopping conductivity of GaAs irradiated by H+ ions

Published:2007-06 Issue:10 Volume:81 Page:1137-1140
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Żukowski P.,Kołtunowicz T.,Partyka J.,Węgierek P.,Komarov F.F.,Mironov A.M.,Butkievith N.,Freik D.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference5 articles.

1. Formation of device isolation in GaAs with polyenergetic ion implantation

2. Frequency-dependent annealing characteristics of the implant-isolated GaAs layers

3. Electronic process in non-crystalline materials;Mott,1979

4. Dielectric properties of implanted silicon layers: Influence of rapid thermal annealing

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