Effect of oxygen partial pressure on electrical characteristics of amorphous indium gallium zinc oxide thin-film transistors fabricated by thermal annealing-Reference-Cited by-同舟云学术

Effect of oxygen partial pressure on electrical characteristics of amorphous indium gallium zinc oxide thin-film transistors fabricated by thermal annealing

Published:2011-10 Issue:3 Volume:86 Page:246-249
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Chiu C.J.,Pei Z.W.,Chang S.T.,Chang S.P.,Chang S.J.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference23 articles.

1. p-channel thin-film transistor using p-type oxide semiconductor, SnO

2. Electronic properties of ZnO field-effect transistors fabricated by spray pyrolysis in ambient air

3. Investigation on doping dependency of solution-processed Ga-doped ZnO thin film transistor

4. Dual-Gate Characteristics of Amorphous $ \hbox{InGaZnO}_{4}$ Thin-Film Transistors as Compared to Those of Hydrogenated Amorphous Silicon Thin-Film Transistors

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