Influence of He-ion irradiation of ceramic AlN
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference47 articles.
1. Comparison of ion irradiation effects in silicon-based preceramic thin films;Pivin;J. Am. Ceram. Soc.,2000
2. Models and mechanisms of irradiation-induced amorphization in ceramics;Weber;Nucl. Instrum. Methods Phys. Res. Sect. B Beam Interact. Mater. Atoms,2000
3. Progress in SiC-based ceramic composites for fusion applications;Katoh;Fusion Sci. Technol.,2003
4. Effect of helium irradiation on deuterium permeation behavior in tungsten;Uemura;J. Nucl. Mater.,2017
5. A study of the effect of helium concentration and displacement damage on the microstructure of helium ion irradiated tungsten;Harrison;J. Nucl. Mater.,2017
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1. Threshold displacement energies and primary radiation damage in AlN from molecular dynamics simulations;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-02
2. First-principle study on the effect of point defects on the mechanical properties, thermal conductivity, and optical properties of wurtzite AlN;Vacuum;2023-01
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4. Evolution of Free Volumes in Polycrystalline BaGa2O4 Ceramics Doped with Eu3+ Ions;Crystals;2021-12-05
5. Study of the radiation disordering mechanisms of AlN ceramic structure as a result of helium swelling;Journal of Materials Science: Materials in Electronics;2021-07-26
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