Oxygen diffusion kinetics during SiO2/SiC plasma oxidation-Reference-Cited by-同舟云学术

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Oxygen diffusion kinetics during SiO2/SiC plasma oxidation

Published:2023-01 Issue: Volume:207 Page:111689
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

You Nannan,Liu Xinyu,Zhang Qian,Xu Yang,Wang Jiayi^ORCID,Wang Shengkai^ORCID

Funder

Chinese Academy of Sciences

Youth Innovation Promotion Association of the Chinese Academy of Sciences

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference39 articles.

1. SiC power-switching devices-the second electronics revolution? Proc;Cooper;IEEE,2002

2. Comparison of 6H-SiC, 3C-SiC, and Si for power devices;Bhatnagar;IEEE Trans. Electron. Dev.,1993

3. Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review

4. High-carbon concentrations at the silicon dioxide–silicon carbide interface identified by electron energy loss spectroscopy

5. Investigation of carbon contaminations in SiO[sub 2] films on 4H-SiC(0001)

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-temperature stability core-shell engineered Ti3AlC2@C@SiO2 for excellent microwave absorbing properties;Vacuum;2023-06

2. Trade-off between Gradual Set and On/Off Ratio in HfO_x-Based Analog Memory with a Thin SiO_x Barrier Layer;ACS Applied Electronic Materials;2023-06-01

3. Reliability and Stability Improvement of MOS Capacitors via Nitrogen–Hydrogen Mixed Plasma Pretreatment for SiC Surfaces;ACS Applied Materials & Interfaces;2023-03-29

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