Electron beam irradiation effects on MOS-transistors and its significance to E-beam testing-Reference-Cited by-同舟云学术

Electron beam irradiation effects on MOS-transistors and its significance to E-beam testing

Published:1987-01 Issue:2-4 Volume:7 Page:397-403
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Ranasinghe D.W.,Machin D.J.,Proctor G.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Contactless Probing of Hybrid Substrates;Gill,1981

2. Effect of Passivation on the Observation of Voltage Contrast in the Scanning Electron Microscope;Taylor;J. Phys. D: Appl. Phys,1978

3. Electron Beam Effects on Microelectronic Devices;Keery;NBS Special Publication Semiconductor Measurement Technology,1977

4. Modeling charge Storage in Electron-Beam-Accessed MOS Memories;Rockstad;J. Vac. Sci. Technol.,1978

5. Measurements of Deep Penetration of Low-Energy Electrons into Metal-Oxide-Semiconductor Structure;Nakamae;J. Appl. Phys,1981

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