Electrical properties of 100 nm pitch CrAu fine electrodes with 40 nm width on GaInAs toward hot electron interference/diffraction devices-Reference-Cited by-同舟云学术

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Electrical properties of 100 nm pitch CrAu fine electrodes with 40 nm width on GaInAs toward hot electron interference/diffraction devices

Published:1997-02 Issue:1-4 Volume:35 Page:241-244
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Hongo Hiroo,Tanaka Hiroaki,Miyamoto Yasuyuki,Otake Toshihiko,Yoshinaga Jiroo,Furuya Kazuhito

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Novel high‐speed transistor using electron‐wave diffraction

2. Ultrafine Fabrication Technique for Hot Electron Interference/Diffraction Devices

3. Fabrication of sub-50 nm finger spacing and width high-speed metal–semiconductor–metal photodetectors using high-resolution electron beam lithography and molecular beam epitaxy

4. Nanostructure Alignment for Hot Electron Interference/Diffraction Devices

5. Ultrahigh resolution of calixarene negative resist in electron beam lithography

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