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Three-dimensional process simulation

Published:1996-12 Issue:1 Volume:34 Page:85-100
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Lorenz J.,Baccus B.,Henke W.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Building 3D device models from 1D- and 2D-geometry and doping profiles;Regli,1995

2. Reliable solid modeling for three-dimensional semiconductor process and device simulation;Westermann,1994

3. Multi-dimensional TCAD: The PROMPT/DESSIS approach;Westermann,1995

4. Multidimensional geometric modeling for 3D TCAD;Regli;Microelectronic Engineering,1966

5. 3D process simulation at IEMN/ISEN;Baccus,1995

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Morphology of films and nanostructures grown on trenched substrates by Monte Carlo simulations;Thin Solid Films;2019-11

2. Fast FinFET Device Simulation under Process-Voltage Variations Using an Assisted Speed-Up Mechanism;2016 29th International Conference on VLSI Design and 2016 15th International Conference on Embedded Systems (VLSID);2016-01

3. Simulation of Microfabrication Processes;Introduction to Microfabrication;2010-11-09

4. Transistors and Atoms;Springer Series in MATERIALS SCIENCE;2004

5. Three-dimensional simulation of layer deposition;Microelectronics Journal;1998-11

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