Integration of copper with an organic low-k dielectric in 0.12-μm node interconnect-Reference-Cited by-同舟云学术

Integration of copper with an organic low-k dielectric in 0.12-μm node interconnect

Published:2002-01 Issue:1-2 Volume:60 Page:119-124
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Fayolle M,Passemard G,Assous M,Louis D,Beverina A,Gobil Y,Cluzel J,Arnaud L

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. M. Moussavi, Proceedings of 30th European Solid State Device Research Conference 2000, pp. 68–71.

2. G. Passemard, O. Demolliens, AMC 2000.

3. O. Demolliens et al., Proceedings of the International Interconnect Technology Conference, 1999.

4. Y. Morand et al., Proceedings of the International Interconnect Technology Conference, 2000, pp. 225–227.

5. D. Louis et al., Proceedings of the International Interconnect Technology Conference, 2000, pp. 250–252.

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