Reduction of molybdenum resistivity by a seed layer of TiW-Reference-Cited by-同舟云学术

Reduction of molybdenum resistivity by a seed layer of TiW

Published:1997-11 Issue: Volume:37-38 Page:373-380
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Franssila S.,Kattelus H.,Nykänen E.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Thin film metallization by magnetron sputtering from highly pure molybdenum targets;Glebovsky;J. Alloys Comp.,1993

2. The microstructure of sputter-deposited coatings;Thornton;J. Vac. Sci. Technol. A,1986

3. Characterization of micron and submicron molybdenum etching by electrical linewidth measurements;Pirilä,1996

4. Mo/TiW Contact for VLSI Applications;Kim;IEEE Trans. Electron Dev.,1985

5. Tungsten: sputter deposition and plasma etching;Franssila;Appl. Surf. Sci.,1991

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