Influence of thin AlAs interface layers on exciton transitions in InGaAs/GaAs quantum wells-Reference-Cited by-同舟云学术

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Influence of thin AlAs interface layers on exciton transitions in InGaAs/GaAs quantum wells

Published:1998-08 Issue: Volume:43-44 Page:237-242
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Lee Kyu-Seok,Lee El-Hang,Lee Chae-Deok,Kyu Noh Sam,Kim Yongmin

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. P.S. Peercy, AT&T Tech. J. 70 (1991) 47, and references therein.

2. p‐channel, strained quantum well, field‐effect transistor

3. Cyclotron resonance of two‐dimensional holes in strained‐layer quantum well structure of (100)In0.20Ga0.80As/GaAs

4. Magneto-optical determination of exciton binding energy in GaAs-Ga1−xAlxAsquantum wells

5. Magneto-optics in GaAs-Ga1−xAlxAs quantum wells

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