Fabrication of Si nano-wires using anisotropic dry and wet etching-Reference-Cited by-同舟云学术

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Fabrication of Si nano-wires using anisotropic dry and wet etching

Published:1998-03 Issue: Volume:41-42 Page:551-554
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Normand P.,Tsoukalas D.,Aidinis C.,Tserepi A.,Kouvatsos D.,Kapetanakis E.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Fabrication of Silicon Quantum Wires Using Separation by Implanted Oxygen Wafer

2. Fabrication of Si Nanostructures for Single Electron Device Applications by Anisotropic Etching

3. Coulomb blockade oscillations at room temperature in a Si quantum wire metal‐oxide‐semiconductor field‐effect transistor fabricated by anisotropic etching on a silicon‐on‐insulator substrate

4. Room Temperature Coulomb Blockade and Low Temperature Hopping Transport in a Multiple-Dot-Channel Metal-Oxide-Semiconductor Field-Effect-Transistor

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