In situ observation of the Si melt–silica glass interface concerning CZ-Si crystal growth-Reference-Cited by-同舟云学术

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In situ observation of the Si melt–silica glass interface concerning CZ-Si crystal growth

Published:2000-03 Issue:2-3 Volume:72 Page:164-168
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Huang Xinming,Yamahara Keiji,Hoshikawa Keigo

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference17 articles.

1. Silicon, Chemical Etching;Zulehner,1982

2. Oxygen in Silicon;Sumino,1994

3. Oxygen in Silicon;Shimura,1994

4. Semiconductor Silicon;Hoshikawa,1981

5. The dissolution of fused silica in molten silicon

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Factors influencing the gas bubble evolution and the cristobalite formation in quartz glass Cz crucibles for Czochralski growth of silicon crystals;Journal of Crystal Growth;2021-09

2. Wetting behavior and reaction mechanism of molten Si in contact with silica substrate;Ceramics International;2019-12

3. In-situ observation of bubble formation at silicon melt–silica glass interface;Journal of Crystal Growth;2011-03

4. In SituHigh-Resolution Transmission Electron Microscopy Observation of Solid-Liquid Interface of Boron-Doped Silicon;Japanese Journal of Applied Physics;2003-05-15

5. Reactions at the liquid silicon/silica glass interface;Journal of Crystal Growth;2003-04

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