Real-time strain monitoring in thin film growth: cubic boron nitride on Si (100)

Author:

Litvinov Dmitri,Clarke Roy,Taylor II Charles A,Barlett Darryl

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference20 articles.

1. Reduced bias growth of cubic boron nitride;Litvinov;Appl. Phys. Lett.,1997

2. Real-time measurement of epilayer strain using a simplified wafer curvature technique;Floro;Mat. Res. Soc. Symp. Proc.,1996

3. Growth and Optical Studies of Bororn Nitride Films on Silicon Substrates. Ph.D. thesis;Taylor II,1996

4. Multibeam optical sensor (MOS)—a laser based thin film growth monitor;Taylor II;Ind. Phys.,1998

5. The tension of metallic films deposited by electrolysis;Stoney;Proc. R. Soc. London Ser. A,1909

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