Chemically induced disordering of Si (100) surfaces upon SC1/SC2 etching analysed by high-resolution transmission electron microscopy-Reference-Cited by-同舟云学术

Chemically induced disordering of Si (100) surfaces upon SC1/SC2 etching analysed by high-resolution transmission electron microscopy

Published:2000-04 Issue:1-3 Volume:73 Page:154-157
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Bollani M,Fares L,Charaı̈ A,Narducci D

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference6 articles.

1. M. Heyns, C. Hasenack, R. De Keersmaecker, R. Falster, in: J. Ruzyllo, E.E. Novak (Eds), Proceedings of the 1st International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, PV 90-9, The Electrochemical Society, Pennington, NJ, 1990, pp. 293–298.

2. S. Verhaverbeke, Dielectric breakdown in thermally grown oxide layers, Ph.D. Thesis, Katholieke Universiteit Leuven, 1993, pp. 125–220.

3. Ideal hydrogen termination of the Si (111) surface

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