Silicon quantum point contact with aluminum gate-Reference-Cited by-同舟云学术

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Silicon quantum point contact with aluminum gate

Published:2000-05 Issue:1-3 Volume:74 Page:193-196
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Prunnila M,Eränen S,Ahopelto J,Manninen A,Kamp M,Emmerling M,Forchel A,Kristensen A,Sorensen B.S,Lindelof P.E,Gustafsson A

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference11 articles.

1. Standardized terminology for oxide charges associated with thermally oxidized silicon

2. S. Horiguchi, M. Nagase, K. Shiraishi, H. Kageshima, Y. Takahashi, K. Murase, in: Abstracts of Silicon Nanoelectronics Workshop, Kyoto, June 12–13 1999.

3. Coulomb blockade oscillations at room temperature in a Si quantum wire metal‐oxide‐semiconductor field‐effect transistor fabricated by anisotropic etching on a silicon‐on‐insulator substrate

4. Quantum mechanical effects in the silicon quantum dot in a single-electron transistor

5. On the origin of tunneling barriers in silicon single electron and single hole transistors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Negative differential transconductance in silicon quantum well metal-oxide-semiconductor field effect/bipolar hybrid transistors;Applied Physics Letters;2014-11-24

2. Quantum-ballistic transport in an etch-defined Si/SiGe quantum point contact;Applied Physics Letters;2002-08-26

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