6H-SiC P-N structures with predominate exciton electroluminescence, obtained by sublimation epitaxy
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference10 articles.
1. Fabrication of 6H‐SiC light‐emitting diodes by a rotation dipping technique: Electroluminescence mechanisms
2. Silicon carbide blue-emitting diodes produced by liquid-phase epitaxy
3. Blue LEDs, UV photodiodes and high-temperature rectifiers in 6H-SiC
4. Fabrication of SiC epitaxial structures for devices by the method of sublimation in an open system
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1. The electroluminescent properties based on bias polarity of the epitaxial graphene/aluminium SiC junction;Journal of Physics D: Applied Physics;2018-06-11
2. Blue Electroluminescence From Metal/Oxide/6H-SiC Tunneling Diodes;IEEE Transactions on Electron Devices;2008-12
3. DEEP LEVEL DEFECTS IN SILICON CARBIDE;International Journal of High Speed Electronics and Systems;2006-09
4. Optical characterization of radiative deep centres in 6H–SiC junction field effect transistors;Semiconductor Science and Technology;2003-10-01
5. A Comparative Study of n-p GaN/SiC Heterojunction and p-n 6h-SiC Homojunction Diodes;Materials Science Forum;2000-05
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