Author:
Anthony Carl J,Jones Allan J,Uren Michael J
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference9 articles.
1. SiC MOS interface characteristics
2. L.A. Lipkin, J.W. Palmour and J.S. Suehle, Trans. Third Int. High Temp. Electron. Conf. (HiTEC) 2 (1996) XIV-15–XIV20.
3. Dielectric strength of thermal oxides on 6H‐SiC and 4H‐SiC
4. A.J. Pidduck, R. Jackson, D.J. Robbins, W.Y. Leong, M. Wheeler, Proc. 2nd Int. Symp. Cleaning Technology in Semiconductor Device Manufacturing, ECS, 92–12, (1992) 453–460.
5. R.J. Bozeat, R.J.T. Bunyan, V. Nayar, In: D. Denton, P.J. Hesketh, H. Hughes (Eds.), Proc. 2nd Int. Symp. Microstructures and Microfabricated Systems, ECS, 95–27 (1995) 272–279.
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