Anomalous forward I–V characteristics of Ti/Au SiC Schottky barrier diodes-Reference-Cited by-同舟云学术

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Anomalous forward I–V characteristics of Ti/Au SiC Schottky barrier diodes

Published:1999-07 Issue: Volume:61-62 Page:345-348
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Morrison D.J,Hilton K.P,Uren M.J,Wright N.G,Johnson C.M,O’Neill A.G

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference5 articles.

1. Cree Research, Durham, North Carolina USA (1998).

2. Effect of surface inhomogeneities on the electrical characteristics of SiC Schottky contacts;Bhatnagar;IEEE Trans. Electron Dev.,1996

3. Analysis of Schottky barrier heights of metal/SiC contacts and its possible application to high voltage rectifying devices;Itoh;Phys. Stat. Sol. (a),1997

4. Surface studies on SiC as related to contacts;Bozak;Phys. Stat. Sol. (b),1997

5. Effect of surface preparation and thermal anneal on electrical characteristics of 4H–SiC Schottky barrier diodes;Alok;Mater. Sci. Forum,1998

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1. Correlation between barrier inhomogeneities of 4H-SiC 1A/600V Schottky rectifiers and deep-level defects revealed by DLTS and Laplace DLTS;Solid-State Electronics;2014-09

2. Prediction of barrier inhomogeneities and carrier transport in Ni-silicided Schottky diode;Applied Surface Science;2006-03

3. Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing;Semiconductor Science and Technology;2005-02-04

4. Highly reproducible ideal SiC Schottky rectifiers: effects of surface preparation and thermal annealing on the Ni/6H-SiC barrier height;Applied Physics A: Materials Science & Processing;2003-11-01

5. Characteristics of Ni Schottky Contacts on Compensated 4H-SiC Layers;Materials Science Forum;2003-09

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