On the interpretation of high frequency capacitance data of 6H-SiC boron compensated pin junction-Reference-Cited by-同舟云学术

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On the interpretation of high frequency capacitance data of 6H-SiC boron compensated pin junction

Published:1999-07 Issue: Volume:61-62 Page:429-432
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Brezeanu Gh,Badila M,Tudor B,Millan J,Godignon P,Chante J.P,Locatelli M.L,Lebedev A,Banu V

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference6 articles.

1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

2. Effect of boron diffusion on the high‐voltage behavior of 6H‐SiCp+nn+structures

3. M.S. Mazzola, S.E. Saldow, A Schonen, Proceedings of the International Conference on Silicon Carbide, III–Nitrides and Related Materials, Stockholm, Sweden, 1997, 609–610.

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Trap-assisted recombination in semiconductors: application to group III gallium nitride material and junctions;PHILOS MAG B;2001

2. Trap-assisted recombination in semiconductors: application to group III gallium nitride material and junctions;Philosophical Magazine B;2001-06

3. Electrical characteristics modeling of large area boron;Solid-State Electronics;2000-04

4. Current–voltage characteristics of large area 6H-SiC pin diodes;Materials Science and Engineering: B;1999-07

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