Density-of-states distribution in AlGaN obtained from transient photocurrent analysis-Reference-Cited by-同舟云学术

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Density-of-states distribution in AlGaN obtained from transient photocurrent analysis

Published:2001-05 Issue:1-3 Volume:82 Page:206-208
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Niehus M,Schwarz R,Koynov S,Heuken M,Meister D,Meyer B.K,Main C,Reynolds S

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference5 articles.

1. Metastability and persistent photoconductivity in Mg‐doped p‐type GaN

2. D. Meister, M. Topf, I. Dirnstorfer, B.K. Meyer, R. Schwarz, M. Heuken, 3rd Int. Conf. on Nitride Semiconductors (ICNS-3), Nice, 1999.

3. Deep levels and persistent photoconductivity in GaN thin films

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