Dry etching of sapphire substrate for device separation in chlorine-based inductively coupled plasmas-Reference-Cited by-同舟云学术

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Dry etching of sapphire substrate for device separation in chlorine-based inductively coupled plasmas

Published:2002-05 Issue:1-3 Volume:93 Page:60-63
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Jeong C.H.,Kim D.W.,Bae J.W.,Sung Y.J.,Kwak J.S.,Park Y.J.,Yeom G.Y.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference8 articles.

1. High rate etching of sapphire wafer using Cl2/BCl3/Ar inductively coupled plasmas

2. Microfabrication by ion‐beam etching

3. Enhanced etching of sapphire damaged by ion implantation

4. Reactive ion etching mechanism of plasma enhanced chemically vapor deposited aluminum oxide film in CF4/O2plasma

5. Reactive Ion Etching of GaN in BCl3 / N 2 Plasmas

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1. Sapphire nanophotonics: Fabrication challenges and optical properties;Micro and Nano Engineering;2022-04

2. FIB micro-milled sapphire for GaN maskless epitaxial lateral overgrowth: a systematic study on patterning geometry;Journal of Materials Science: Materials in Electronics;2021-05-04

3. Solid State Conversion: Microstructuring of Crystalline Al₂O₃ (Sapphire) by Annealing of Patterned Aluminium Films;Key Engineering Materials;2021-02

4. Increasing etching depth of sapphire nanostructures using multilayer etching mask;Journal of Vacuum Science & Technology B;2019-11

5. Pillars or Pancakes? Self-Cleaning Surfaces without Coating;Nano Letters;2018-10-26

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